-
EWA
-
Forschung
-
Themen
-
Halbleiter-Bauelemente
Galliumnitrid (GaN)
mechanism in GaN HEMTs , International Semiconductor Conference (CAS), Sinaia, Romania, 10.2016, doi: 10.1109/SMICND.2016.7783060 [...] of Schottky Gate AlGaN/GaN HEMTs , IEEE Transactions on Electron Devices, 01.2017, doi: 10.1109/TED.2016.2633725 Unger, C. ; Pfost, M. ; Mocanu, M.; Waltereit, P.; Reiner, R. : Pulse robustness of AlGaN/GaN …